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specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 12 april 2010 ah125 ?w high linearity ingap hbt amplifier product features ? 400 ? 3600 mhz ? +28 dbm p1db ? +45 dbm output ip3 ? 16.2 db gain @ 2140 mhz ? 150 ma current draw ? +5 v single supply ? mttf > 100 years ? lead-free/green/rohs-compliant sot-89 package ? class 2 hbm esd rating (>2kv) applications ? repeaters ? mobile infrastructure ? lte / wcdma / edge / cdma product description the ah125 is a high dynamic range driver amplifier in a low-cost surface mount packag e. the ingap/gaas hbt is able to achieve high performance across a broad range with +45 dbm oip3 and +28 dbm of compressed 1db power while drawing 150 ma current. the ah125 is available in a lead-free/green/rohs-compliant sot-89 package. all devices are 100% rf and dc tested. the ah125 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. internal biasing allows the ah125 to maintain high linearity over temperature and operate directly off a single +5v supply. this combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3g base stations or repeaters. functional diagram rf in gnd rf out gnd 1 23 4 function pin no. rf input 1 rf output / vcc 3 ground 2, 4 specifications parameter units min typ max operational bandwidth mhz 400 3600 test frequency mhz 2140 gain db 14 16.2 18 input return loss db 12 output return loss db 12 w-cdma channel power (2) @ -50 dbc aclr dbm +19 output p1db dbm +28 output ip3 (3) dbm +41 +45 noise figure db 4.4 quiescent collector current ma 130 150 170 device voltage v +5 1. test conditions unless otherwise noted: 25oc, vsupply = +5 v, in tuned application circuit. 2. w-cdma 3gpp test model 1+ 64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 3. oip3 is measured with two tones separated by 1 mhz. the suppression on the largest im3 product is used to calculate the oip3 using a 2: 1 rule. measured at 17dbm/tone for 900 mhz, 14 dbm/tone for 1960 mhz, and 12 dbm/tone for 2140 mhz. absolute maximum rating parameter rating storage temperature -65 to +150 c rf input power, cw, 50 , t=25 c input p10db device voltage +6 v max junction temperature, t j for 10 6 hours mttf 200 c thermal resistance, jc 64.3 c / w operation of this device above any of th ese parameters may cause permanent damage. typical performance parameter units typical frequency mhz 920 1960 2140 gain db 20 17 16.2 input return loss db 20 16 12 output return loss db 9.9 9 12 w - cdma channel power (2) @ -50 dbc aclr dbm +19 +19 +19 output p1db dbm +28.1 +27.8 +28.0 output ip3 (3) dbm +47 +47 +45 noise figure db 7.7 4.6 4.4 quiescent collector current ma 150 device voltage v +5 ordering information part no. description AH125-89G ? w high linearity ingap hbt amplifier ah125-89pcb900 900 mhz evaluation board ah125-89pcb1960 1960 mhz evaluation board ah125-89pcb2140 2140 mhz evaluation board ah125-89pcb2600 2600 mhz evaluation board standard t/r size = 1000 pieces on a 7? reel.
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 12 april 2010 ah125 ?w high linearity ingap hbt amplifier typical device data s-parameters (v device = +5 v, i cc = 150 ma, 25 c, unmatched 50 ohm system) notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is s hown in the dashed red line. s-parameters (v device = +5 v, i cc = 150 ma, 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 100 -2.51 176.96 19.12 153.71 -33.85 -7.98 -4.58 -168.55 300 -6.65 -179.55 16.82 171.45 -41.51 -51.50 -3.50 167.66 500 -0.47 -166.72 19.86 129.11 -32.54 37.90 -6.46 -173.90 700 -0.50 179.58 16.95 110.14 -32.11 15.12 -4.57 -177.11 900 -0.56 173.91 15.09 99.64 -32.29 6.66 -4.14 177.58 1100 -0.65 170.52 13.68 91.32 -32.15 2.53 -3.89 173.40 1300 -0.78 166.87 12.37 83.49 -32.04 -2.50 -3.71 169.83 1500 -0.82 163.90 11.21 76.80 -32.11 -4.03 -3.64 167.10 1700 -0.93 161.34 10.11 71.12 -31.97 -7.89 -3.70 164.08 1900 -0.93 157.61 9.40 64.93 -31.94 -9.93 -3.64 160.19 2100 -0.94 154.21 8.47 58.83 -31.97 -10.87 -3.54 156.60 2300 -0.91 151.59 7.66 53.42 -31.80 -14.20 -3.48 153.92 2500 -0.93 149.24 7.06 49.26 -32.04 -16.18 -3.67 152.18 2700 -0.90 145.94 6.70 43.87 -31.63 -16.91 -3.72 147.67 2900 -0.96 143.87 6.12 39.45 -31.18 -18.50 -3.54 143.63 3100 -1.07 139.90 5.74 34.00 -31.37 -23.47 -3.52 141.32 3300 -1.18 136.50 5.09 29.36 -31.25 -20.88 -3.70 140.24 3500 -1.18 133.80 4.62 24.20 -31.12 -27.12 -3.72 135.07 3700 -1.11 132.39 4.12 20.26 -31.25 -26.33 -3.64 130.47 device s-parameters are available for download off of the website at: http://www.tqs.com application circuit pcb layout circuit board material: .062? total thickness with a .014? fr4 top rf layer, 4 layers (other layers added for rigidity), 1 oz copper, r = 4.3, microstrip line details: width = .031?, spacing = .035?
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 12 april 2010 ah125 ?w high linearity ingap hbt amplifier 700-800 mhz reference design 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw typical o-fdma performance at 25 c frequency 700 750 800 mhz gain 20.4 20.3 20.1 db input return loss 12 17 25 db output return loss 7.5 6.8 6.3 db evm pout=+18 dbm 0.9 0.7 0.7 % aclr pout=+18 dbm -52.6 -56 -54.4 dbc output p1db +28.9 +29.4 +29.2 dbm output ip3 pout=+18 dbm/tone, 1mhz spacing +43.7 +46.2 +45.5 dbm quiescent current, icq 150 ma vcc +5 v ? notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of c11 is placed at 40 mil from ah125 rfout pin. (1.7 o @ 750 mhz) 5. the edge of r3 is placed at 210 mil from the edge of c11. (8.7 o @ 750 mhz) 6. the edge of c9 is placed next to the edge of r3. 7. the edge of r1 is placed at 100 mil from ah125 rfin pin. (4.2 o @ 750 mhz) 8. the edge of c10 is placed 250 mil from the edge of r1. (10.4 o @ 750 mhz) 17 18 19 20 21 22 700 720 740 760 780 800 gain (db) frequency (mhz) gain vs. frequency -30 -25 -20 -15 -10 -5 0 700 720 740 760 780 800 return loss (db) frequency (mhz) return loss s11 s22 30 35 40 45 50 10 12 14 16 18 20 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone 700 mhz 750 mhz 800 mhz 0 1 2 3 4 5 15 16 17 18 19 20 21 22 evm (%) output power (dbm) evm vs. output power 700 mhz 750 mhz 800 mhz 802.16-2004 o-fdma, 64qam- 1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw -65 -60 -55 -50 -45 -40 15 16 17 18 19 20 aclr (dbc) output power (dbm) aclr vs. output power 700 mhz 750 mhz 800 mhz w-cdma 3gpp test model 1+64 dpch par = 9.7 db @ 0.01% probability 3.84 mhz bw note: for improved output return loss, 10db, please contact triquint applications support for a reference design employing feedback. corresponding oip3 performance will be ~+43dbm. t lead =+25c t lead =+25c t lead =+25c t lead =+25c t lead =+25c
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 869-960 mhz reference d esign (ah125-89pcb900) w-cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency 869 920 960 mhz gain 20 20 20 db input return loss 14 20 22 db output return loss 10 9.9 9.9 db aclr pout=+18 dbm -52 -52.5 -52 dbc output p1db +27.4 +28.1 +27.9 dbm output ip3 pout=+17dbm/tone, 1mhz spacing +44 +47 +49 dbm noise figure 7.9 7.7 7.5 db quiescent current, icq 150 ma vcc +5 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of r2 is placed at 280 mil from ah125 rfout pin. (14.3 o @ 920 mhz) 5. the edge of c9 is placed 35 mil from the edge of r2. (1.8 o @ 920 mhz) 6. the edge of r1 is placed at 100 mil from ah125 rfin pin. (5.1 o @ 920 mhz) 7. the edge of c10 is placed 130 m il from the edge of r1. (6.6 o @ 920 mhz) 18 19 20 21 22 840 860 880 900 920 940 960 980 |s21| (db) frequency (mhz) gain vs. frequency -40c +25c +85c -25 -20 -15 -10 -5 0 840 860 880 900 920 940 960 980 |s11| (db) frequency (mhz) input return loss vs. frequency -40c +25c +85c -25 -20 -15 -10 -5 0 840 860 880 900 920 940 960 980 |s22| (db) frequency (mhz) output return loss vs. frequency -40c +25c +85c 18 19 20 21 22 -40 -15 10 35 60 85 |s21| (db) temperature (c) gain vs. temperature 869 mhz 920 mhz 960 mhz -70 -65 -60 -55 -50 -45 -40 14 15 16 17 18 19 20 aclr (dbc) output power (dbm) aclr vs. output power over frequency 869 mhz 920 mhz 960 mhz w-cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw -70 -65 -60 -55 -50 -45 -40 14 15 16 17 18 19 20 aclr (dbc) output power (dbm) aclr vs. output power over temperature -40c +25c +85c w-cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw freq.=920 mhz 35 40 45 50 55 10 11 12 13 14 15 16 17 18 oip3 (dbm) output power per tone (dbm) oip3 vs. pout/tone over temperature -40c +25c +85c freq.=920 mhz 1 mhz tone spacing 35 40 45 50 55 10 11 12 13 14 15 16 17 18 oip3 (dbm) output power per tone (dbm) oip3 vs. pout/tone over frequency 869 mhz 920 mhz 960 mhz 35 40 45 50 55 860 880 900 920 940 960 oip3 (dbm) frequency (mhz) oip3 vs. frequency -40c +25c +85c 1 mhz tone spacing pout=+17dbm per tone t lead =+25c t lead =+25c 1 mhz tone spacing
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier 869-960 mhz reference d esign (ah125-89pcb900) w-cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw 130 140 150 160 170 180 10 12 14 16 18 20 22 icq (ma) output power (dbm) current vs. output power 869 mhz 920 mhz 960 mhz 24 25 26 27 28 29 30 860 880 900 920 940 960 p1db (dbm) frequency (mhz) p1db vs. frequency -40c +25c +85c 18 20 22 24 26 28 30 0123456789 output power (dbm) input power (dbm) output power vs. input power 869 mhz 920 mhz 960 mhz 6.0 7.0 8.0 9.0 10.0 860 880 900 920 940 960 980 1000 nf (db) frequency (mhz) noise figure vs. frequency -40c +25c +85c t lead =+25c t lead =+25c
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier 1805-1880 mhz reference design w-cdma 3gpp test model 1+64 dpch, par = 10.2 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency 1805 1842 1880 mhz gain 17.8 18.2 18.1 db input return loss 9.5 16.5 17.0 db output return loss 9.4 8.4 7.8 db aclr pout=+18 dbm -51 -51 -49 dbc output p1db +28 +27.9 +27.8 dbm output ip3 pout=+14dbm/tone, 1mhz spacing +44 +45 +43.5 dbm quiescent current, icq 150 ma vcc +5 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 250 mil from ah125 rfout pin. (25.5 o @ 1845 mhz) 5. the edge of r1 is placed against the edge of c10. 6. the edge of c10 is placed at 30 mil from ah125 rfin pin. (3.1 o @ 1845 mhz) 15 16 17 18 19 20 1800 1820 1840 1860 1880 1900 |s21| (db) frequency (mhz) gain vs. frequency -30 -25 -20 -15 -10 -5 0 1.80 1.82 1.84 1.86 1.88 1.90 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 -65 -60 -55 -50 -45 -40 11 12 13 14 15 16 17 18 19 20 21 aclr (dbc) output power (dbm) aclr vs. output power 1805 mhz 1842 mhz 1880 mhz w-cdma 3gpp tm +64dpch par=10.2db @ 0.01% probability 3.84 mhz bw 38 40 42 44 46 48 8 1012141618 oip3 (dbm) output power/tone (dbm) oip3 vs. output power per tone 1805 mhz 1842 mhz 1880 mhz 24 25 26 27 28 29 30 1820 1830 1840 1850 1860 1870 1880 p1db (dbm) frequency (mhz) p1db vs. frequency 2.4 pf 1.1 pf 0 t lead =+25c 1 mhz tone spacing t lead =+25c t lead =+25c t lead =+25c t lead =+25c
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier c3 c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 r20 c20 1930-1990 mhz reference design (ah125-89pcb1960) w-cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency 1930 1960 1990 mhz gain 17 17 17 db input return loss 12 16 23 db output return loss 10 9 8 db aclr pout=+18 dbm -53 -53 -53 dbc output p1db +27.8 +27.8 +27.7 dbm output ip3 pout=+14dbm/tone, 1mhz spacing +45 +47 +47 dbm noise figure 4.5 4.6 4.6 db quiescent current, icq 150 ma vcc +5 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 215 mil from ah125 rfout pin. (23.3 o @ 1960 mhz) 5. the edge of r1 is placed against the edge of c10. 6. the edge of c10 is placed at 80 mil from ah125 rfin pin. (8.7 o @ 1960 mhz) 14 15 16 17 18 19 1.90 1.92 1.94 1.96 1.98 2.00 |s21| (db) frequency (ghz) gain vs. frequency -40c +25c +85c -30 -25 -20 -15 -10 -5 0 1.90 1.92 1.94 1.96 1.98 2.00 |s11| (db) frequency (ghz) input return loss vs. frequency -40c +25c +85c -30 -25 -20 -15 -10 -5 0 1.90 1.92 1.94 1.96 1.98 2.00 |s22| (db) frequency (ghz) output return loss vs. frequency -40c +25c +85c -65 -60 -55 -50 -45 -40 -35 12 14 16 18 20 22 aclr (dbc) output power (dbm) aclr vs. output power 1930 mhz 1960 mhz 1960 mhz w \ cdma ? 3gpp ? test ? model ? 1+64 ? dpch par ? = ? 10.3 ? db ? @ ? 0.01% ? probability 3.84 ? mhz ? bw 35 40 45 50 55 10 11 12 13 14 15 16 17 18 oip3 (dbm) output power (dbm) oip3 vs. output power/tone 1930 mhz 1960 mhz 1990 mhz 35 40 45 50 55 1.93 1.94 1.95 1.96 1.97 1.98 1.99 oip3 (dbm) frequency (ghz) oip3 vs. frequency 24 25 26 27 28 29 30 1.93 1.94 1.95 1.96 1.97 1.98 1.99 p1db (dbm) frequency (ghz) p1db vs. frequency 100 120 140 160 180 200 10 12 14 16 18 20 22 icq (ma) output power (dbm) current vs. output power 4.75 v 5.00 v 5.25 v 2.0 3.0 4.0 5.0 6.0 1.90 1.92 1.94 1.96 1.98 2.00 nf (db) frequency (ghz) noise figure vs. frequency -40c +25c +85c t lead =+25c 1 mhz tone spacing t lead =+25c t lead =+25c 1 mhz tone spacing pout/tone =+ 14 dbm t lead =+25c t lead =+25c
triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 8 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier 2010-2025 mhz reference design td-scdma 3 carrier, par = 10 db @ 0.01% probability, 1.28 mhz bw typical td-scdma performance at 25 c frequency 2010 2015 2025 mhz gain 16.3 16.3 16.4 db input return loss 12.6 13.1 14.4 db output return loss 8.2 8.1 7.9 db aclr pout=+16 dbm -49.5 -50 -50.1 dbc output p1db +28 +28.3 +28 dbm output ip3 pout=+10 dbm/tone, 1mhz spacing +45 +45 +45 dbm quiescent current, icq 150 ma vcc +5 v c3 c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 c20 r20 notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with coppe r trace in target application. 4. the edge of c9 is placed at 120 mil from ah125 rfout pin. (13.4 o @ 2015 mhz) 5. the edge of c2 is placed 275 mi l from the edge of c9. (30.7 o @ 2015 mhz) 6. the edge of c10 is placed at 60 mil from ah125 rfin pin. (6.7 o @ 2015 mhz) 7. the edge of r1 is placed next to the edge of c10. 14 15 16 17 18 19 2010 2015 2020 2025 2030 gain (db) frequency (mhz) gain vs. frequency -25 -20 -15 -10 -5 0 2010 2015 2020 2025 2030 return loss (db) frequency (mhz) return loss s11 s22 -65 -60 -55 -50 -45 -40 -35 10 12 14 16 18 20 aclr (dbc) output power (dbm) aclr vs. output average power 2010 mhz 2015 mhz 2025 mhz 30 35 40 45 50 9 1011121314151617 oip3 (dbm) output power/tone (dbm) oip3 vs. output power per tone 2010 mhz 2015 mhz 2.7 ghz 140 160 180 200 220 240 260 280 300 320 10 12 14 16 18 20 22 24 26 28 30 collector current (ma) output power (dbm) collector current vs output power 20 22 24 26 28 30 32 4 6 8 10 12 14 16 output power (dbm) input power (dbm) output power vs. input power p1db=+28.3 dbm t lead =+25c 1 mhz tone spacing t lead =+25c t lead =+25c t lead =+25c t lead =+25c t lead =+25c
specifications and information are subject to change w ithout notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 9 of 12 april 2010 ah125 ?w high linearity ingap hbt amplifier c3 c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 2110-2170 mhz reference design (ah125-89pcb2140) w-cdma 3gpp test model 1+64 dpch, par = 10.3 db @ 0.01% probability, 3.84 mhz bw typical w-cdma performance at 25 c frequency 2110 2140 2170 mhz gain 16.1 16.2 16.3 db input return loss 10 12 15 db output return loss 13 12 11 db aclr pout=+18 dbm -52 -52 -52 dbc output p1db +28 +28 +28 dbm output ip3 pout=+12 dbm/tone, 1mhz spacing +49 +45 +47 dbm noise figure 4.3 4.4 4.4 db quiescent current, icq 150 ma vcc +5 v notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 120 mils from ah125 rfout pin. (14.2 o @ 2140 mhz) 5. the edge of c2 is placed at 280 m ils from the edge of c9. (33.2 o @ 2140 mhz) 6. the edge of c10 is placed at 60 mils from ah125 rfin pin. (7.1 o @ 2140 mhz) 7. the edge of r1 is placed 10 mils from the edge of c10. (1.2 o @ 2140 mhz) 14 15 16 17 18 2.10 2.12 2.14 2.16 2.18 2.20 |s21| (db) frequency (ghz) gain vs. frequency -40c +25c +85c -25 -20 -15 -10 -5 0 2.10 2.12 2.14 2.16 2.18 2.20 |s11| (db) frequency (ghz) input return loss -40c +25c +85c -25 -20 -15 -10 -5 0 2.10 2.12 2.14 2.16 2.18 2.20 |s22| (db) frequency (ghz) output return loss -40c +25c +85c 14 15 16 17 18 -40 -15 10 35 60 85 |s21| (db) temperature (c) gain vs. temperature 2110 mhz 2140 mhz 2170 mhz -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 aclr (dbc) output power (dbm) aclr vs. output power 2110 mhz 2140 mhz 2170 mhz w-cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 aclr (dbc) output power (dbm) aclr vs. output power -40c +25c +85c w-cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw 35 40 45 50 55 8 9 10 11 12 13 14 15 16 17 18 oip3 (dbm) pout/tone (dbm) oip3 vs. output power/tone 2110 mhz 2140 mhz 2170 mhz 24 25 26 27 28 29 30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 p1db (dbm) frequency (ghz) p1db vs. frequency 0 1 2 3 4 5 6 7 8 2.10 2.12 2.14 2.16 2.18 2.20 nf (db) frequency (ghz) noise figure vs. frequency -40c +25c +85c t lead =+25c t lead =+25c 1 mhz tone spacing t lead =+25c
specifications and information are subject to change w ithout notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 10 of 12 april 2010 application note ?w high linearity ingap hbt amplifier 2.5-2.7 ghz reference design 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw typical performance at 25 c frequency (ghz) 2.5 2.6 2.7 units gain 13.9 14.0 13.7 db input return loss 9.5 13.1 12.9 db output return loss 9.4 8.7 8.2 db evm pout=+19 dbm 1.5 1.25 1.3 % output p1db +28 +28 +28 dbm output ip3 pout=+16 dbm/tone, 1mhz spacing +49 +48 +47 dbm quiescent current, icq 150 ma vcc +5 v notes: 9. the primary rf microstrip line is 50 . 10. components shown on the silkscreen but not on the schematic are not used. 11. 0 jumpers can be replaced with copper trace in target application. 12. distance from side edge of c10 to si de edge of u1 pin 1 is 55 mils (7.9 @2600 mhz). 13. distance from end edge of r1 to side edge of u1 pin 1 is 110 mils (15.8 @2600 mhz).. 14. distance from side edge of c9 to side edge of u1 pin 3 is 90 mils (13.0 @2600 mhz).. 10 11 12 13 14 15 2.40 2.50 2.60 2.70 2.80 gain (db) frequency (ghz) gain vs. frequency -20 -15 -10 -5 0 2.40 2.50 2.60 2.70 2.80 return loss (db) frequency (ghz) return loss vs. frequency s11 s22 0 1 2 3 4 5 12 14 16 18 20 22 evm (%) output power (dbm) evm vs. output power 2.5 ghz 2.6 ghz 2.7 ghz 802.16-2004 o-fdma, 64qam-1/2 1024- fft, 20 symbols and 30 subchannels 5 mhz carrier bw -65 -60 -55 -50 -45 -40 -35 12 14 16 18 20 22 aclr (dbc) output power (dbm) aclr vs. output power 2.5 ghz 2.6 ghz 2.7 ghz w-cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw 30 35 40 45 50 55 10 12 14 16 18 20 22 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone 2.5 ghz 2.6 ghz 2.7 ghz ? ? 1 2 3 ? ? u1 r1 c1 r2 c2 c3 r4 c10 c9 l1 c4 c8 circuit board material: 0.014? fr 4, single layer, 1 oz copper, r = 4.3, microstrip line details: width = .031?, spacing = .035? t lead =+25c t lead =+25c t lead =+25c t lead =+25c j1 j2 c1 rf input rf output r1 r2 r1 z= 50 ohm l=55 mils z= 50 ohm l=55 mils 1pf 0 ohms 22pf 0 ohms c10 0.8pf c9 0.6pf u1 ah125-89pcb2600 1 2 3 z= 50 ohm l=90 mils r4 vcc l1 0 ohms c8 1uf c4 1000pf 18nh 0805cs c3 22pf t lead =+25c 1 mhz tone spacing
specifications and information are subject to change w ithout notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 11 of 12 april 2010 application note ?w high linearity ingap hbt amplifier 3.4-3.6 ghz reference design 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw typical o-fdma performance at 25 c frequency 3.4 3.5 3.6 ghz gain 11.5 12.1 12 db input return loss 8 15 21 db output return loss 16 13 11 db evm pout=+18 dbm 1.1 1.0 1.1 % output p1db +27 +27.3 +27.5 dbm output ip3 pout=+16 dbm/tone, 1mhz spacing +49.5 +45.7 45.2 dbm quiescent current, icq 150 ma vcc +5 v c3 c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 circuit board material: 0.014? fr 4, single layer, 1 oz copper, r = 4.3, microstrip line details: width = .031?, spacing = .035? notes: 1. the primary rf microstrip line is 50 . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 60 mil from ah125 rf out pin. (11.6 o @ 3.5 ghz) 5. the edge of c10 is placed at 45 mil from ah125 rfin pin. (8.7 o @ 3.5 ghz) 6. the edge of l2 is placed next to the edge of c10. 8 9 10 11 12 13 3.30 3.40 3.50 3.60 3.70 gain (db) frequency (ghz) gain vs. frequency -30 -25 -20 -15 -10 -5 0 3.30 3.40 3.50 3.60 3.70 return loss (db) frequency (ghz) return loss vs. frequency s11 s22 0 1 2 3 4 5 10 12 14 16 18 20 22 evm (%) output power (dbm) evm vs. output power 3.4 ghz 3.5 ghz 3.6 ghz 802.16-2004 o-fdma, 64qam- 1/2, 1024-fft, 20 symbols and 30 subchannels, 5 mhz carrier bw 140 150 160 170 180 190 10 12 14 16 18 20 22 collector current (ma) output power (dbm) current vs output power 3.4 ghz 3.5 ghz 3.6 ghz 0 5 10 15 20 10 12 14 16 18 20 22 collector efficiency (%) output power (dbm) efficiency vs output power 3.4 ghz 3.5 ghz 3.6 ghz 35 40 45 50 55 12 14 16 18 20 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone 3.4 ghz 3.5 ghz 3.6 ghz note: this reference design was constructed on fr4 to illustra te potential ah125 performance in the 3.4-3.6 ghz frequency rang e. for customer applications of ah125 at these frequencies, we recommend the use of more suitable materials such as rogers 3000 series. t lead =+25c t lead =+25c t lead =+25c t lead =+25c t lead =+25c t lead =+25c 1 mhz tone spacing
specifications and information are subject to change w ithout notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 12 of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier mechanical information this package is lead-free/green/ro hs-compliant. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. outline drawing land pattern product marking the ah125 will be marked with an ?ah125g? designator with a lot code marked below the part designator. the ?y? represents the last digit of the year the part was manufactured, the ?xxx? is an auto- generated number, and ?z ? refers to a wafer number in a batch. msl / esd rating esd rating: class 2 value: passes 2000v to <4000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 2000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated th ru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. yxxx-z ah125g

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